High Side Mosfet Driver Pulse Transformer

For more information see the overview for mosfet and igbt gate drivers product page.

High side mosfet driver pulse transformer.

A special section deals with the gate drive requirements of the mosfets in synchronous rectifier applications. High side isolation 600 v is reached within the silicon. With gate drive transformer both hi lo side mosfets will get equal amplitude gate drive signals where as with bootstrapping technique used in chips the hi side gate pulse amplitude will be lesser than lo side gate pulse due to associated drop of bootstrap diode coming into picture in hi side. Here s a scope grab showing the pulse from the driver and the voltage on the mosfet side of the transformer.

The blue trace is the gate and shows the 1 duty cycle i was using at this point. Gate charge of the mosfet to be driven bias voltage allowed ripple and discharge during switching switching frequency maximum high side pulse width minimum low side pulse width. Circuit block diagram it can therefore directly drive a low side switch and through a pulse transformer an high side switch. High side driver supply bootstrap supply is requested.

It has been optimized for both capacitive load drive and pulse transformer demagnetization. The td300 is a three channel mosfet driver with pulse transformer driving capability. Noise immunity negative voltage robustness of the high side driver. Matched propagation delay between high and low side drive prevents any unbalanced transformer usage.

Its low buffer rds on can. A pulse transformer is an isolation transformer which can operate at speeds often needed for half bridge gate driver applications up to 1 mhz.